| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a boron phosphide semiconductor light emitting element in which a boron phosphide semiconductor layer is provided as a barrier layer and which has a surface electrode for supplying an operating current over a wide range to a light emitting unit of a region convenient to output a light. <P>SOLUTION: The boron phosphide semiconductor light emitting element comprises the surface electrode having a lower electrode made of a metal not brought into ohmic contact with the boron phosphide semiconductor layer brought into direct contact with the boron phosphide semiconductor layer, and an upper electrode made of a metal brought into ohmic contact with the boron phosphide semiconductor layer provided on the lower electrode so that the part of the upper electrode is brought into contact with the surface of the boron phosphide semiconductor layer. <P>COPYRIGHT: (C)2003,JPO |
