| 摘要 |
PROBLEM TO BE SOLVED: To ensure high selectivity for an insulation film becoming a mask material while suppressing the generation of a conical pattern defect in dry etching for machining a silicon substrate. SOLUTION: In dry etching employing a resist pattern 13 for patterning a silicon nitride film 12 and a silicon oxide film 11, a defect introduced into a silicon substrate 10 at the time of growth to cause a conical pattern defect is removed by digging down the surface of an isolation trench forming region on a silicon substrate at the time of overetching. Subsequently, the silicon substrate 10 is dry-etched using a patterned silicon nitride film 12A as a mask, thus forming an isolation trench. COPYRIGHT: (C)2003,JPO
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