发明名称 |
Deposition methods |
摘要 |
A deposition method includes positioning a substrate within a deposition chamber defined at least in part by chamber walls. At least one of the chamber walls comprises a chamber surface having a plurality of purge gas inlets to the chamber therein. A process gas is provided over the substrate effective to deposit a layer onto the substrate. During such providing, a material adheres to the chamber surface. Reactive purge gas is emitted to the deposition chamber from the purge gas inlets effective to form a reactive gas curtain over the chamber surface and away from the substrate, with such reactive gas reacting with such adhering material. Further implementations are contemplated.
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申请公布号 |
US2004033310(A1) |
申请公布日期 |
2004.02.19 |
申请号 |
US20020222304 |
申请日期 |
2002.08.15 |
申请人 |
SARIGIANNIS DEMETRIUS;DERDERIAN GARO J.;BASCERI CEM;SANDHU GURTEJ S.;GEALY F. DANIEL;CARLSON CHRIS M. |
发明人 |
SARIGIANNIS DEMETRIUS;DERDERIAN GARO J.;BASCERI CEM;SANDHU GURTEJ S.;GEALY F. DANIEL;CARLSON CHRIS M. |
分类号 |
C23C16/44;C23C16/455;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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