发明名称 Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device
摘要 An electrode structure for a semiconductor device and a method for forming the electrode structure, and a mounted body including the semiconductor device are provided in which the semiconductor device can be easily connected to a circuit board with high reliability. An aluminum electrode is formed on an IC substrate. A passivation film is formed on the IC substrate so as to cover the peripheral portion of the aluminum electrode. A bump electrode is formed on the aluminum electrode by a wire bonding method. An aluminum oxide film is formed on the surface of the aluminum electrode that is exposed around the bump electrode. A conductive adhesive is applied as a bonding layer to the tip portion of the bump electrode of the semiconductor device by a transfer method or a printing method. The semiconductor device is aligned in the face-down state in such a manner that the bump electrode abuts on a terminal electrode of a circuit board, and is provided on a circuit board. In this state, the conductive adhesive is hardened. A gap between the IC substrate and the circuit board is filled with an insulating resin.
申请公布号 US6603207(B2) 申请公布日期 2003.08.05
申请号 US20020086210 申请日期 2002.02.27
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 BESSHO YOSHIHIRO
分类号 H01L21/56;H01L21/60;H01L21/768;H01L23/485;(IPC1-7):H01L23/48;H01L23/52;H01L29/40;H01L21/44;H01L21/48 主分类号 H01L21/56
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