发明名称 |
Electrode structure for semiconductor device, method for forming the same, mounted body including semiconductor device and semiconductor device |
摘要 |
An electrode structure for a semiconductor device and a method for forming the electrode structure, and a mounted body including the semiconductor device are provided in which the semiconductor device can be easily connected to a circuit board with high reliability. An aluminum electrode is formed on an IC substrate. A passivation film is formed on the IC substrate so as to cover the peripheral portion of the aluminum electrode. A bump electrode is formed on the aluminum electrode by a wire bonding method. An aluminum oxide film is formed on the surface of the aluminum electrode that is exposed around the bump electrode. A conductive adhesive is applied as a bonding layer to the tip portion of the bump electrode of the semiconductor device by a transfer method or a printing method. The semiconductor device is aligned in the face-down state in such a manner that the bump electrode abuts on a terminal electrode of a circuit board, and is provided on a circuit board. In this state, the conductive adhesive is hardened. A gap between the IC substrate and the circuit board is filled with an insulating resin.
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申请公布号 |
US6603207(B2) |
申请公布日期 |
2003.08.05 |
申请号 |
US20020086210 |
申请日期 |
2002.02.27 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
BESSHO YOSHIHIRO |
分类号 |
H01L21/56;H01L21/60;H01L21/768;H01L23/485;(IPC1-7):H01L23/48;H01L23/52;H01L29/40;H01L21/44;H01L21/48 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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