发明名称 |
Method for reduction of contaminants in amorphous-silicon film |
摘要 |
A method of conditioning a chemical vapor deposition chamber prior to a deposition step on a substrate. The method includes passing a deposition gas mixture into the chamber under reaction conditions so as to deposit a layer of amorphous silicon on the interior surfaces in the chamber. Thereafter, a device comprising an amorphous silicon film is manufactured in a chemical vapor deposition chamber.
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申请公布号 |
US2003143410(A1) |
申请公布日期 |
2003.07.31 |
申请号 |
US20030359955 |
申请日期 |
2003.02.06 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WON TAE KYUNG;SHANG QUANYUAN |
分类号 |
C23C16/44;(IPC1-7):C23C16/00;B32B9/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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