APPARATUS AND METHOD FOR BATCH PROCESSING SEMICONDUCTOR SUBSTRATES IN MAKING SEMICONDUCTOR LASERS
摘要
An apparatus and method for batch processing semiconductor lasers producing substantially contamination free laser bar end surfaces for optimal growth of end surface layers are provided. The method includes loading a laser cell comprising a plurality of laser bars and an empty cassette capable of holding a plurality of laser bars into a cleaving chamber and pumping the cleaving chamber down to a desired pressure. Next, a cleaving cycle is performed in which an end laser bar is cleaved off the laser cell. Laser bars are deposited in the cassette. The cassette is then moved into a deposition chamber where a layer of material is deposited on one end surface of all of the laser bars.
申请公布号
WO0225706(A3)
申请公布日期
2003.07.31
申请号
WO2001US29468
申请日期
2001.09.20
申请人
ADC TELECOMMUNICATIONS, INC.
发明人
HUBBARD, KEVIN, J.;MCELHINNEY, MARK;PRIDDY, SCOTT, W.;COLOMBO, PAUL, E.