| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor element which is superior in the smoothness of division edge faces and in the yield. <P>SOLUTION: In the manufacturing method of a nitride semiconductor element, a semiconductor wafer (100) where a nitride semiconductor (102) is formed on a substrate (101) is divided into nitride semiconductors (110). Especially, the manufacturing method for the nitride semiconductor element has a process for forming an island-like nitride semiconductor, by exposing a substrate from the first main surface side of first and the second main surfaces of the semiconductor wafer (100), a process for forming a groove (103) in the substrate (101) in at least the first main surface side and/or the second main surface side, a process for forming along a brake line (104) in the groove (103) by laser irradiation and a process of separating the semiconductor wafer along the brake line (104). <P>COPYRIGHT: (C)2003,JPO |
