| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress the deterioration of a light emitting characteristic and a surface property of a semiconductor light emitting device which is such that a surface type semiconductor light modulator is integrated inside a surface emitting semiconductor laser device. <P>SOLUTION: Between a crystal growth process of a GaAs/AlGaAs lower distributed Bragg reflector 402 of a first conductivity type and a crystal growth process of a GaInNAs light absorption layer 403, a process for removing an Al material remaining in a place to be brought into contact with a nitride compound material in a growth chamber or with an impurity contained in the nitride compound material, an Al reactant, an Al compound, or Al is set up. <P>COPYRIGHT: (C)2003,JPO</p> |
