发明名称 SOLID STATE IMAGE SENSING ELEMENT
摘要 PROBLEM TO BE SOLVED: To control the film thickness of an on-chip micro lens in proportion to the area of a unit pixel, to make a process control easy and to improve optical transparent efficiency. SOLUTION: Four convex lens sections 50A, 50B, 50C and 50D of the on-chip micro lens 50 are placed corresponding to a unit pixel 20. A reading gate 38 and a FD section 24 of a reading transistor M2 are arranged in a central part of a light receiving section 22A of a photo diode 22, with them isolated. A control wire 40 of the reading gate 38 and a wire 42 of the FD section 24 are placed by using boundaries of convex lens sections 50A, 50B, 50C and 50D of the on-chip micro lens 50. Other wire such as a wire 44 and a light blocking band wire 46 can be also placed in the boundaries. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003218332(A) 申请公布日期 2003.07.31
申请号 JP20020012568 申请日期 2002.01.22
申请人 SONY CORP 发明人 SUGIYAMA HISANOBU
分类号 G02B3/00;H01L27/14;H01L27/146;H01L27/148;H01L31/0232;H01L31/062;H01L31/10;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):H01L27/14 主分类号 G02B3/00
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