| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device having a window structure which does not absorb laser light and an etching stop layer which enables a normal selective etching, and also to provide a method of manufacturing the same. SOLUTION: The semiconductor laser device comprises a semiconductor substrate, lower clad layer formed on the semiconductor substrate, active layer having a quantum well structure, first upper clad layer, the etching stop layer formed on the first upper clad layer, current blocking layer having a stripe region, second upper clad layer formed at least in the stripe region, and contact layer formed at least on the second upper clad layer. At least part of the active layer and the first upper clad layer near an end face of a laser resonator contains doped impurities, and the quantum well structure of the active layer containing the impurities is disordered, while the etching stop layer contains no impurity. COPYRIGHT: (C)2003,JPO
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