发明名称 METHOD AND APPARATUS FOR FILM DEPOSITION
摘要 PROBLEM TO BE SOLVED: To obtain both a high step coverage characteristic and uniform thickness distribution. SOLUTION: An alternating voltage of constant power is applied to a target electrode 12 and a substrate electrode 14 in a vacuum vessel 10 containing an Ar gas from a power source 20 for a target and a power source 22 for a substrate, respectively. Thereby, discharge is generated between the target electrode 12 and the substrate electrode 14. The sputtering of the target electrode 12 is carried out by the discharge, and sputtered particles are deposited on the substrate electrode 14. At that time, the bias electrical potential of the substrate electrode 14 is detected, the phase difference of an alternate current signal outputted from each power source 20 and 22 is adjusted according to the bias electrical potential with a phase adjuster 24, and impedance based on the discharge is controlled constant. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003213409(A) 申请公布日期 2003.07.30
申请号 JP20020011490 申请日期 2002.01.21
申请人 HITACHI HIGH TECH CORP 发明人 UMEHARA SATOSHI;KAMEI MITSUHIRO;TANAKA TAKESHI
分类号 C23C14/34;H01L21/285;(IPC1-7):C23C14/34 主分类号 C23C14/34
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