| 发明名称 |
Method of manufacturing a semiconductor device and semiconductor device |
| 摘要 |
A method of manufacturing a semiconductor device comprising forming a sacrificial layer including one or more conductive film on a semiconductor substrate, forming a cavity used as a template of electroplating in the sacrificial layer, growing a metal film on a surface of the cavity by the electroplating using the conductive layer as a seed layer so that a cylindrical or convex electrode can be formed, and removing the sacrificial layer so that the electrode can be formed.
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| 申请公布号 |
US6599794(B2) |
申请公布日期 |
2003.07.29 |
| 申请号 |
US20020195484 |
申请日期 |
2002.07.16 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA;FUJITSU LIMITED |
发明人 |
KIYOTOSHI MASAHIRO;EGUCHI KAZUHIRO;NAKABAYASHI MASAAKI;INOUE FUMIHIKO |
| 分类号 |
H01L21/288;H01L21/02;H01L21/768;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/288 |
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