MOS transistor, method for fabricating a MOS transistor and method for fabricating two complementary MOS transistors

摘要

A MOS transistor and a method for fabricating the same include producing a well doped by a first conductivity type in a semiconductor substrate. An epitaxial layer having a dopant concentration of less than 1017 cm-3 is disposed on a surface of the doped well. Source/drain regions doped by a second conductivity type, opposite to the first conductivity type, and a channel region, are disposed in the epitaxial layer, and their depth is less than or equal to the thickness of the epitaxial layer. A method for fabricating two complementary MOS transistors is also provided.