PURPOSE: A high brightness field emission display is provided to achieve improved field emission characteristics by lowering the drive voltage of field emitter and lengthening the scanning time. CONSTITUTION: A field emission display comprises pixels arranged into a matrix shape on a glass substrate. Each of pixels includes a ferroelectric transistor(200) formed on the glass substrate; and a thin film type field emitter(100) formed in the vicinity of the ferroelectric transistor. The ferroelectric transistor includes a band type gate; a ferroelectric film formed on the gate; a floating gate formed in parallel with the gate; an amorphous silicon channel formed by inserting an insulation film on the floating gate; a source and a drain formed on the amorphous silicon channel; and a source electrode and a drain electrode for connecting the source and the drain to an external terminal.
申请公布号
KR20030062508(A)
申请公布日期
2003.07.28
申请号
KR20020002738
申请日期
2002.01.17
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
CHO, GYEONG IK;HWANG, CHI SEON;JUNG, JUNG HUI;LEE, JIN HO;SONG, YUN HO