| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, in which, during the formation of a shallow trench isolation and a deep trench isolation for forming a trench of an adequate depth in a semiconductor device and disposing an insulation film inside the trench, as part of a semiconductor isolation forming process, the trench is formed in a straight line on a single substrate though a single etching process, instead of two separate processes for the shallow trench isolation and the deep trench isolation. SOLUTION: A first deep trench isolation 145 is formed in a semiconductor substrate 100. Then, following a nitrogenous reaction process, a barrier film is formed on an inner wall of a second deep trench isolation 145. A silicon epitaxial growth process is thereafter carried out so as to allow silicon to grow inside a first deep trench isolation 145 area, thereby forming a shallow trench isolation 180. COPYRIGHT: (C)2003,JPO
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