| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element. <P>SOLUTION: This method for manufacturing a semiconductor element comprises a step for providing a semiconductor substrate, a step for forming a first insulating film 38 on which bit-line contact holes and a storage node contact hole are formed, a step for forming bit-line contact plugs and a storage node in the bit-line contact holes and the storage node contact hole, a step for removing the first insulating film 38 remaining between them, a step for forming a second insulating film 41 on the resultant structure, a step for forming a first conductive layer 43 on the second insulating film 41, a step for forming a third insulating film 45 on the first conductive layer 43, a step for forming the bit-line contact holes by removing the first conductive layer 43 and the third insulating film 45, and a step for forming a second conductive layer 53 in the bit-line contact holes. <P>COPYRIGHT: (C)2003,JPO |
