NON-VOLATILE TWO-TRANSISTOR SEMICONDUCTOR MEMORY CELL AND METHOD FOR PRODUCING THE SAME

摘要

The invention relates to a non-volatile two-transistor semiconductor memory cell and to a method for producing the same. In a substrate (1), source and drain regions (2) for a selection transistor (AT) and a memory transistor (ST) are configured. Said memory transistor (ST) has a first insulating layer (3), a charge storage layer (4), a second insulating layer (5) and a memory transistor control layer (6). The selection transistor (AT) comprises a first insulating layer (3') and a selection transistor control layer (4*). The use of different materials for the charge storage layer (4) and the selection transistor control layer (4*) allows to substantially improve the charge maintaining properties of the memory cell while maintaining constant electrical properties by adapting the substrate doping.