| 摘要 |
PROBLEM TO BE SOLVED: To obtain a p-type GaAs single crystal having an average dislocation density of≤100/cm<SP>-2</SP>, and to provide a method for producing the same. SOLUTION: The p-type GaAs single crystal has an average dislocation density of≤100/cm<SP>-2</SP>and contains Si, Zn, B and In as dopants. COPYRIGHT: (C)2003,JPO
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