发明名称 |
Method of fabricating a high dielectric constant metal oxide capacity insulator film using atomic layer CVD |
摘要 |
The method for fabricating a semiconductor device in accordance with the present invention has the steps of: forming a metal film as a lower electrode of a capacitor on a semiconductor substrate, followed by forming a capacity insulator film over the lower electrode by the ALCVD process; and forming an upper electrode of the capacitor on the capacity insulator film.
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申请公布号 |
US6596602(B2) |
申请公布日期 |
2003.07.22 |
申请号 |
US20020053598 |
申请日期 |
2002.01.24 |
申请人 |
NEC CORPORATION |
发明人 |
IIZUKA TOSHIHIRO;YAMAMOTO TOMOE |
分类号 |
H01L27/108;H01L21/02;H01L21/314;H01L21/316;H01L21/8242;(IPC1-7):H01L27/108;H01L21/824 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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