| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be made smaller in circuit area than normally and improved in degree of integration. SOLUTION: An electrostatic discharge protection circuit is formed of a p-type MOS transistor Qp, an n-type MOS transistor Qn, and a protection resistance R. When electrostatic discharge is produced, the p-type MOS transistor Qp or n-type MOS transistor Qn is turned on and a surge current flows to a power source Vdd or reference potential Vss to limit voltage variation of a pad 1, so that an internal circuit 2 is prevented from being broken owing to the electrostatic discharge. A portion (n-type MOS transistor Qn) of an electrostatic protection circuit is formed below an electrode 41 forming the pad 1, so that the circuit area can be made smaller than normal. COPYRIGHT: (C)2003,JPO
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