发明名称 |
Method for fabricating a non-volatile memory |
摘要 |
A method for fabricating a non-volatile memory is described. A substrate having a strip stacked structure thereon is provided. A buried drain is then formed in the substrate beside the strip stacked structure and an insulating layer is formed on the buried drain. A silicon layer and a cap layer are sequentially formed over the substrate. The cap layer, the silicon layer and the strip stacked structure are then patterned successively in a direction perpendicular to the buried drain, wherein the strip stacked structure is patterned into a plurality of gates. A liner oxide layer is formed on the exposed surfaces of the gates, the substrate and the silicon layer. Thereafter, the cap layer is removed and a metal salicide layer is formed on the exposed surface of the silicon layer.
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申请公布号 |
US2003134462(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20020055265 |
申请日期 |
2002.01.22 |
申请人 |
FAN TSO-HUNG;YEH YEN-HUNG;CHAN KWANG-YANG;LIU MU-YI;LU TAO-CHENG |
发明人 |
FAN TSO-HUNG;YEH YEN-HUNG;CHAN KWANG-YANG;LIU MU-YI;LU TAO-CHENG |
分类号 |
H01L21/3205;H01L21/336;H01L21/4763;H01L21/8246;H01L27/112;H01L27/115;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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