发明名称 High-voltage detection circuit for a semiconductor memory
摘要 In a high-voltage detection circuit (10) for detecting a high voltage (VP) output from a high-voltage generation circuit (14), an output of the high-voltage generation circuit is dropped in voltage by a high-voltage drop circuit (13) to output a dropped voltage (VO), a reference-voltage generation circuit (11) generates a reference voltage (Vref) of a comparatively-high potential using the the high voltage (VP) as its power source, and a comparison circuit (12) compares the dropped voltage (VO) with the reference voltage (Vref) to control a high-voltage level.
申请公布号 US2003133349(A1) 申请公布日期 2003.07.17
申请号 US20020176633 申请日期 2002.06.24
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MIHARA MASAAKI
分类号 G01R19/165;G11C5/14;G11C16/06;G11C16/30;H01L21/822;H01L27/04;(IPC1-7):G11C5/00 主分类号 G01R19/165
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