| 发明名称 |
Semiconductor nitride structures |
| 摘要 |
The present invention provides a unipolar semiconductor structure comprising: at least one active layer comprising at least one group III-nitride; and at two barrier layers disposed on either side of the active layer, each of the two barrier layers comprising at least one group
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| 申请公布号 |
US6593589(B1) |
申请公布日期 |
2003.07.15 |
| 申请号 |
US19990239947 |
申请日期 |
1999.01.29 |
| 申请人 |
THE UNIVERSITY OF NEW MEXICO |
发明人 |
OSINSKI MAREK;ELISEEV PETR |
| 分类号 |
H01L29/12;H01L29/20;H01L31/0304;H01L33/06;H01L33/32;(IPC1-7):H01L29/06;H01L31/032 |
主分类号 |
H01L29/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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