| 摘要 |
PURPOSE: A memory device is provided to reduce an area per unit cell and to easily achieve an overlay margin by using 7F2 layout of DRAM(Dynamic Random Access Memory) cells. CONSTITUTION: A plurality of word lines(33) is formed on a semiconductor substrate(31), wherein the word lines(33) are arranged by a space of 1F as a minimum line width and a unit word line group(39) sets to three word lines arranged by a space of 2F. A plurality of bit lines(35) are arranged vertically to the word lines(33) by a space of 1F. A plurality of active regions(37) are electrically connected to two bit lines and two word lines, and arranged by bar-shape having a space of 1F each other.
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