| 摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory wherein trench source lines are installed, an interference is not generated when programing is performed, a current is not decreased when reading is performed, and prescribed conductivity can be maintained. SOLUTION: This flash memory is provided with a substrate in which trenches are formed, doping trench source lines formed in regions on bottom surfaces of the trenches, and insulating materials formed in the trenches. A first dielectric layer, a first conducting layer, a second dielectric layer and a second conducting layer which are formed on the substrate are formed in order. The first conducting layer is made to be a floating gate, and the second conducting layer is made to be a control gate. COPYRIGHT: (C)2003,JPO
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