| 摘要 |
PROBLEM TO BE SOLVED: To provide a variable wavelength semiconductor laser device of a TTG laser type excellent in laser characteristics and variable wavelength characteristics. SOLUTION: The variable wavelength semiconductor laser device 1 has a mesa of a laminated structure comprising a p-AlInAs oxidizing layer 14, a p-InP lower clad layer 16, a variable wavelength layer 18, an n-InP intermediate layer 20, a MQW active layer 22, a p-InP spacer layer 24, a p-grating 26 and p-InP embedded layer 28 on a p-InP substrate 12. Al of the oxidizing layer 14 is selectively oxidized, and becomes Al oxide layer 15 on the both sides of the mesa. The side of mesa is filled up with an n-InP contact layer 30, a p-current block layer 32 and an n-current block layer 34, and a current block structure is formed. A p-InP clad layer 36 and p-cap layer 38 are laminated on the mesa and the n-current block layer 34. A first p-side electrode 40 and a second p-side electrode 42 are provided on the cap layer and the back side of the substrate, and an n-side electrode 44 is provided on the contact layer. Current injection into the MQW active layer 22 is carried out by the first p-side electrode and the n-side electrode, and the current injection into the variable wavelength layer is carried out by the second p-side electrode and the n-side electrode. COPYRIGHT: (C)2003,JPO
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