SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which both high breakdown voltage and high current can be realized at the active element part while avoiding breakdown due to a reverse bias current. SOLUTION: The semiconductor device 10 comprises an active element part, i.e., an SIThy 12, a rectifying section, i.e., a diode 14, and an isolation layer 16 for insulating the SIThy 12 from the diode 14. A p+type semiconductor region 48 is formed beneath a first anode electrode 26 in the diode 14. Furthermore, a buried p+type semiconductor region 50 is formed while being spaced apart by a distance L1 from the p+type semiconductor region 48. The buried p+type semiconductor region 50, a p+type semiconductor region 36 formed in the SIThy 12, and a buried p+type semiconductor region 38 are connected electrically. A missing part 52 of an n-type semiconductor region 42 is formed beneath the second anode electrode 30 of the diode 14. COPYRIGHT: (C)2003,JPO