发明名称 |
Silicon optoelectronic device and light emitting apparatus using the same |
摘要 |
A silicon optoelectronic device and a light-emitting apparatus using the silicon optoelectronic device are provided. The silicon optoelectronic device includes: a substrate based on a n-type or p-type silicon; a doped region formed on one surface of the substrate and doped to a ultra-shallow depth with a predetermined dopant to be an opposite type from that of the substrate to provide a photoelectrical conversion effect by quantum confinement in a p-n junction between the doped region and the substrate; and first and second electrodes formed on the substrate to be electrically connected to the doped region. The silicon optoelectronic device may further includes a control layer formed on one surface of the substrate to act as a mask in forming the doped region and to limit the depth of the doped region to be ultra-shallow. The silicon optoelectronic device has excellent efficiency and can be used as either a light-emitting device or a light-receiving device. Since the optoelectronic device uses silicon as a base material, it can be manufactured at low cost.
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申请公布号 |
US2003127655(A1) |
申请公布日期 |
2003.07.10 |
申请号 |
US20020122421 |
申请日期 |
2002.04.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI BYOUNG-LYONG;NAM SEUNG-HO;LEE EUN-KYUNG;YOU JAE-HO;KIM JUN-YOUNG |
分类号 |
H01L33/24;H01L31/10;H01L33/06;H01L33/34;(IPC1-7):H01L27/15 |
主分类号 |
H01L33/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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