| 摘要 |
PURPOSE: A method for forming a gate of a semiconductor device is provided to be capable of improving operating speed of devices by reducing interface resistance between a tungsten film and a polysilicon layer by using selective oxidation processing. CONSTITUTION: A gate oxide layer, a polysilicon layer(22), a tungsten nitride layer(23) and a tungsten film(24) are sequentially formed on a semiconductor substrate(20). After forming a hard mask(25) on the tungsten film, a gate(200) is formed by selectively etching the tungsten film, the tungsten nitride layer and the polysilicon layer by using the hard mask as a mask. A re-oxide layer(26) is formed on the gate oxide and at both sidewalls of the polysilicon layer(22) by selective oxidation processing. By annealing the resultant structure, tungsten silicide contacts(28) are formed at interface between the tungsten nitride layer(23) and the polysilicon layer(22).
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