METHOD FOR FORMING HIGH-PERMITTIVITY DIELECTRIC FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a high-permittivity dielectric film of a semiconductor device is provided to be capable of improving depositing speed and reducing chlorine residues by forming HfO2 film using ultraviolet. CONSTITUTION: An Hf source(200) is deposited on a semiconductor substrate(100) by applying the Hf source into a chamber. The non-reactive Hf source is removed by applying inert gases into the chamber. By applying an oxygen source(300) into the chamber, a HfO2 film(400) is formed. Chlorines adsorbed on the HfO2 layer are removed by irradiating ultraviolet into the resultant structure. The non-reactive Hf source and oxygen source are removed by applying inert gases.