METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING GROOVE

摘要

PURPOSE: A method for fabricating a semiconductor device using a groove is provided to control easily an effective channel length and improve a reverse short channel effect by increasing a process margin of an LDD(Lightly Doped Drain) region. CONSTITUTION: A shallow trench(104) is formed within an active region of a semiconductor substrate(100). A gate insulating layer(106) and a gate electrode(108) are formed on the semiconductor substrate within the trench. The first spacer(110) is formed on a sidewall of the gate electrode in order to cover the shallow trench. An LDD region(112) is formed near to a surface of the semiconductor substrate. The second spacer(114) is formed at a sidewall of the first spacer. A source/drain junction region(116) is formed within the semiconductor substrate.