| 摘要 |
PURPOSE: A dynamic random access memory device is provided to increase the cell efficiency as well as to increase the number of net dice by reducing the size at the core region in the dynamic random access memory(DRAM) device. CONSTITUTION: A dynamic random access memory(DRAM) device includes a plurality of cell wells(500a,500b,500c,500d), a sense amplifier(623a), a sub word line driver(623b) and a sub hole(623c). The DRAM device further includes a first R-well, a first N-well and a second R-well. In the DRAM device, the sense amplifier(623a) is formed on the first R-well, the first N-well and the second R-well and the sub word line driver(623b) is formed on the first R-well, the first N-well and the second R-well. And, the Vbb is applied to each of the cell wells, the first R-well and the second R-well and the Vpp is applied to the N-well.
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