METHOD OF CLEANING WAFER SURFACE

摘要

PURPOSE: A method of cleaning a wafer surface is provided to be capable of easily and exactly removing particles by sequentially performing wet-cleaning using mixed solutions of NH4OH, H2O2 and H2O and plasma-cleaning. CONSTITUTION: A surface of a wafer is firstly cleaned by wet-cleaning using diluted NH4OH: H2O2: H2O solution(11). The wafer surface is then secondly cleaned by plasma-cleaning containing NF3(12). The diluted NH4OH: H2O2: H2O solution has the rate of 1: 0.1: 100. The wet-cleaning is performed at the temperature of 60-70°C.