| 摘要 |
PURPOSE: A method for forming a tungsten plug of a semiconductor device is provided to be capable of effectively reducing contact resistance by thinning the thickness of a barrier metal using PVD(Physical Vapor Deposition)-W. CONSTITUTION: After forming an interlayer dielectric(12) on a semiconductor substrate(11), a contact hole is formed by selectively etching the interlayer dielectric(12). A Ti film(13) and a TiN film(14) as a barrier metal are sequentially formed on the resultant structure including the contact hole. A thin PVD-W film(15) is deposited on the TiN film(14). Then, a CVD-W film(16) is entirely filled into the contact hole. At the time, the TiN film(14) and the PVD-W film(15) have same thickness of 100-500Å.
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