| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of improving capacitance by increasing the surface area of MIM capacitor. CONSTITUTION: After forming an insulating layer(103) on a logic circuit region, the first metal patterns(102) are formed in the insulating layer. The first interlayer dielectric(107) having the first trench and the first via hole is formed on the resultant structure. The first plug(109b) is filled into the first via hole and the first spacer(105a) is formed at both sidewalls of the first trench. The second metal pattern(110b) is formed to connect the first plug and a lower electrode(110a) is simultaneously formed in the first trench. A dielectric film(111) is formed on the lower electrode. The second interlayer dielectric(112) having the second trench and the second via hole is formed on the resultant structure. The second plug(114) is filled into the second via hole, and the second spacer is formed at both sidewalls of the second trench. An upper wiring(115b) is formed to connect the second plug(114) and an upper electrode(115a) is simultaneously formed in the second trench.
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