METHOD FOR DRYING WAFER

摘要

PURPOSE: A method for drying a wafer is provided to be capable of preventing the generation of a water film at a contact hole of the wafer by maximizing Marangoni effect using the temperature change of deionized water after carrying out a wet cleaning process. CONSTITUTION: A plurality of wafers(2) is loaded in a chamber(3). IPA/N2 gas is jetted to the upper portion of the wafers from the upper portion of the chamber. At this time, the wafers moves upward. Deionized water(1) having a predetermined temperature is simultaneously jetted to the lower portion of the wafers from the lower portion of the chamber for decreasing the surface tension of the jetted deionized water. At this time, the wafers are dried without the generation of a water film. Preferably, the predetermined temperature of the deionized water is in the range of 25-40 °C.