METHOD FOR FABRICATING SILICIDE LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a silicide layer of a semiconductor device is provided to prevent an etching of the first spacer in a clean process and form a stable silicide layer by forming a silicon layer on each upper portion of a gate electrode and the first spacer. CONSTITUTION: A gate electrode(201) is formed on an upper portion of a semiconductor substrate(200). The first and the second insulating layers are sequentially deposited on the entire surface of the semiconductor substrate. The first and the second spacers(202,203) are formed on a sidewall of the gate electrode by over-etching the first and the second insulating layers. A polysilicon is grown on each upper portion of the first spacer and the gate electrode. The etch-off is formed by over-etching the first and the second spacers. A silicon layer is formed on an upper portion and a side portion of the partially exposed gate electrode. A source/drain region(206) is formed by implanting ions into the semiconductor substrate. A metal silicide layer(208) is formed on each upper portion of the gate electrode and the source/drain region.