发明名称 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor-manufacturing apparatus that can early find treatment failures in a treatment apparatus, such as an etching-treating apparatus, and can reduce loss in a sample and treatment time. SOLUTION: The semiconductor-manufacturing apparatus comprises a built-in type measurement means 106 for measuring the shape or dimensions of an element formed in a wafer, an etching treatment apparatus 101 that utilizes plasma generated under a reduced pressure for etching the wafer, an ashing treatment apparatus 102 for allowing the wafer after the etching treatment to be subjected to ashing treatment, a wet treatment apparatus 107 for allowing the wafer after the etching treatment to be subjected to wet treatment, a drying treatment apparatus 108 for drying the wafer after the wet treatment, a conveyance means 103 for successively conveying the wafer, that is conveyed to a wafer cassette carrying-in port to the built-in type measurement means and each treatment apparatus one by one, and a conveyance treatment chamber that connects the built-in type measurement means 106, etching treatment apparatus 101, ashing treatment apparatus 102, wet treatment apparatus 107, drying treatment apparatus 108, and conveyance means by a conveyance passage 103, where pressure can be reduced, and at the same time has the wafer cassette carrying-in port for carrying in a cassette that accommodates a plurality of wafers to be etched. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003188220(A) 申请公布日期 2003.07.04
申请号 JP20010384872 申请日期 2001.12.18
申请人 HITACHI LTD;HITACHI HIGH-TECHNOLOGIES CORP;TRECENTI TECHNOLOGIES INC 发明人 KAGOSHIMA AKIRA;YAMAMOTO HIDEYUKI;TORII ZENZO;USUI TAKETO
分类号 H01L21/66;H01L21/00;H01L21/302;H01L21/311;H01L21/3213;H01L21/677;(IPC1-7):H01L21/66 主分类号 H01L21/66
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