| 摘要 |
<p>A plasma processing apparatus includes a source gas injection device to inject a gaseous source material into a source region of the apparatus, a plasma generating device to transmit energy to teh source material to generate a source plasma, and a process gas injection device to inject a gaseous process material into a process region of the apparatus. A magnetic filter assembly imposes a magnetic field generally between the source and process regions to control the flow of charged particles from the source plasma into the gaseous process material to generate a process plasma in the process region. A source electrode in contact with the source plasma controls the potential of the source plasma. An electrode supports a workpiece and generates a potential to attract charged particles from the process plasma toward the workpiece so that the charged particles strike the workpiece.</p> |
