| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to be capable of reducing contact resistance by improving etch uniformity between a source/drain and gate contact. CONSTITUTION: A trench isolation layer(22a) is formed at a desired portion of a substrate(21). A poly gate formation region is defined by partially removing the surface of the trench isolation layer(22a). A poly gate(24) is formed on the poly gate formation region. After forming an interlayer dielectric(25) on the entire surface of the resultant structure, a contact region(26a) is formed to contact the poly gate(24).
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