发明名称 TWO-STAGE LOW POWER RING OSCILLATOR
摘要 PURPOSE: A two-stage low power ring oscillator is provided to reduce the current consumption and the generation of jitter by cross-coupling differential amplifiers. CONSTITUTION: Respective sources of second and third PMOS(P-type Metal Oxide Semiconductor) transistors(42,43) are connected to a drain of a first PMOS transistor(41). A bias voltage(Vbiasp) is applied to a date of the first PMOS transistor(41). An input signal(Vib) and an input signal(Vi) are inputted to respective gates of the second and third PMOS transistors(42,43). Cross-coupling first terminal transistors(46) are provided between a drain and a ground terminal of the second PMOS transistor(42). A first oscillating unit(Cz)(44) is provided between an output node(Vzb) and a ground terminal. A resistor(Rz) is provided between the output node(Vzb) and a cross-coupling node(Vob). Cross-coupling second terminal transistors(47) are provided between a drain and a ground terminal of the PMOS transistor(43). A second oscillating unit(Cz)(45) is provided between an output node(Vz) and a ground terminal. A resistor(Rz) is provided between the output node(Vz) and a cross coupling node(Vo).
申请公布号 KR20030054932(A) 申请公布日期 2003.07.02
申请号 KR20010085366 申请日期 2001.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, GWANG IL
分类号 H03K3/353;(IPC1-7):H03K3/353 主分类号 H03K3/353
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