METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of uniformly distributing dopants and preventing channeling when ion-implantation processing. CONSTITUTION: A polysilicon layer(22) is formed on a semiconductor substrate(21). An organic BARC(Bottom Anti-Reflective Coating) layer(23) is formed on the polysilicon layer. After forming a photoresist pattern(24) on the organic BARC layer(23), dopants are implanted into the polysilicon layer(22) using the photoresist pattern as a mask. The photoresist pattern(24) and the organic BARC layer(23) are then removed. The thickness of the organic BARC layer(23) is 200-2000Å.