| 摘要 |
PURPOSE: A magnetic RAM(Random Access Memory) and a manufacturing method thereof are provided, which has a new cell array structure suitable for an increase in memory capacity and a manufacturing method thereof. CONSTITUTION: A magnetic RAM includes a memory array(11). The memory array includes a plurality of memory cells(12) formed at the upper portion of a semiconductor substrate for storing data by using a magnetic resistance effect. The magnetic RAM further includes a plurality of bit lines connected to one end portions of the memory cells and a read-out circuit connected to the bit lines. The magnetic RAM further includes the first write line prolonged to the first direction for writing data at one out of the memory cells and the second write line prolonged to the second direction for writing the data at the one out of the memory cells. |
