| 摘要 |
PROBLEM TO BE SOLVED: To avoid the occurrence of a facet in a selectively epitaxially grown semiconductor layer. SOLUTION: The semiconductor device comprises an insulating layer 4 having an opening 4W and formed on a semiconductor, and the selectively epitaxially grown semiconductor layer 7 formed limited in the opening 4W in such a manner that the insulating layer 4 is formed of a laminated film of a thermal oxide layer 2 on the surface of the semiconductor and a deposited oxide film 3 deposited and formed on the film 2 and a nitrogen introduced at a concentration gradient gradually reduced from the surface toward a depthwise direction. The inner wall surface of the opening 4W of the layer 4 is formed as an inverted tapered surface 6 broadened in the depthwise direction, and the selectively epitaxially grown semiconductor-layer is formed on the surface of the semiconductor exposed in the opening of the insulating layer and avoiding the occurrence of the faucet on the surface of the semiconductor layer by the reverse taper. COPYRIGHT: (C)2003,JPO
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