| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an MDL semiconductor element whose reliability is increased in such a way that a silicide process is performed selectively according to a region when the semiconductor element which comprises a logic region and a memory region is manufactured. <P>SOLUTION: The method of manufacturing the MDL semiconductor element is composed of a step in which a substrate comprising a first region and a second region adjacent to the first region is prepared, a step in which a substance layer for first gate formation is formed in the first region, a step in which a substance layer for second gate formation is formed in the first region with the formed substance layer for first gate formation and the second region, a step in which the substance layer for second gate formation is patterned selectively and in which a boundary dummy-pattern layer is simultaneously formed in the boundary between the first region and the second region and a step in which the substance layer for first gate formation is patterned selectively and in which a first gate is formed. <P>COPYRIGHT: (C)2003,JPO |
