发明名称 |
Plasma processing apparatus, and cleaning method therefor |
摘要 |
There is provided a gas exhaustion pipe which is directly connected to a diffusion member which diffuses a process gas and is formed inside an upper electrode which serves as a shower head. A cleaning gas exhaustion line whose one end is constituted by the gas exhaustion pipe is connected to a gas exhaustion line which is connected to a gas exhaustion port and exhausts gas inside a chamber. A cleaning gas supplied from a cleaning gas line is exhausted from the chamber through the inside of the upper electrode.
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申请公布号 |
US2003119328(A1) |
申请公布日期 |
2003.06.26 |
申请号 |
US20020328049 |
申请日期 |
2002.12.26 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
FUJISATO TOSHIAKI |
分类号 |
C23C16/44;C23C16/455;C23C16/509;H01J37/32;H01L21/302;H01L21/3065;H01L21/31;H01L21/461;(IPC1-7):H01L21/302 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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