发明名称 Plasma processing apparatus, and cleaning method therefor
摘要 There is provided a gas exhaustion pipe which is directly connected to a diffusion member which diffuses a process gas and is formed inside an upper electrode which serves as a shower head. A cleaning gas exhaustion line whose one end is constituted by the gas exhaustion pipe is connected to a gas exhaustion line which is connected to a gas exhaustion port and exhausts gas inside a chamber. A cleaning gas supplied from a cleaning gas line is exhausted from the chamber through the inside of the upper electrode.
申请公布号 US2003119328(A1) 申请公布日期 2003.06.26
申请号 US20020328049 申请日期 2002.12.26
申请人 TOKYO ELECTRON LIMITED 发明人 FUJISATO TOSHIAKI
分类号 C23C16/44;C23C16/455;C23C16/509;H01J37/32;H01L21/302;H01L21/3065;H01L21/31;H01L21/461;(IPC1-7):H01L21/302 主分类号 C23C16/44
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