| 摘要 |
PURPOSE: A method for planarizing a semiconductor device is provided to be capable of preventing bridge between bit lines due to defects by polishing without dishing or erosion. CONSTITUTION: An anti-reflective layer(230) is formed on a semiconductor substrate(200) having word lines(225). After forming an interlayer dielectric(240) on the resultant structure, a self-aligned contact is formed by selectively etching the interlayer dielectric using a T-type plug mask. After depositing a plug forming layer(260) on the resultant structure, the interlayer dielectric(240) and the plug forming layer(260) are annealed in a furnace at the temperature of 700-900°C. The resultant structure is then polished to expose the word line(225) by CMP(Chemical Mechanical Polishing).
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