| 摘要 |
PURPOSE: A method for planarizing a semiconductor device is provided to be capable of preventing dishing or erosion by minimizing the polishing selectivity between an interlayer dielectric and a plug forming layer. CONSTITUTION: An anti-reflective layer(230) is formed on a semiconductor substrate(200) having word lines(225). After forming an interlayer dielectric(240) on the resultant structure, the interlayer dielectric(240) is planarized by the first CMP(Chemical Mechanical Polishing) using the first slurry composed of fumed or colloidal silicon compound. At this time, pH(potential of Hydrogen) of the first slurry has 9-12. A self-aligned contact is formed by selectively etching the interlayer dielectric using a T-type plug mask. After forming a plug forming layer(260) on the resultant structure, the plug forming layer(260) is planarized by the second CMP using the second slurry composed of fumed or colloidal oxide, such as SiO2, CeO2 and ZnO2. At this time, the pH of the second slurry is 2-6.
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