| 摘要 |
PURPOSE: A multiple gate thin film transistor is provided to form a multiple gate without increasing the dimension of the multiple gate by forming a gate electrode having a plurality of slots such that the gate electrode crosses a semiconductor layer of a zigzag type. CONSTITUTION: The semiconductor layer of a zigzag type is formed on an insulation substrate(30). A gate insulation layer is formed on the substrate including the semiconductor layer. The gate electrode(36) is formed on the gate insulation layer, including at least one slot crossing the semiconductor layer. An interlayer dielectric is formed on the gate insulation layer including the gate electrode, having a contact hole exposing both edge parts of the semiconductor layer. A source/drain electrode(41-1,41-2) is formed on the interlayer dielectric, contacting the semiconductor layer through the contact hole.
|
