| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of preventing the damage of the lower surface of a contact hole when removing a hard mask. CONSTITUTION: After sequentially depositing an interlayer dielectric(130) and a hard mask on a semiconductor substrate(100) having a plurality of bit lines(110), the first photoresist pattern is formed on the resultant structure. After forming a plurality of storage node contact holes by carrying out an etching process using the first photoresist pattern as an etching mask, the second photoresist layer is coated on the resultant structure. After exposing the hard mask by etching the second photoresist layer, the hard mask is removed by using the second photoresist layer as an etching stop layer. After removing the remaining second photoresist layer, a plurality of lower electrodes(180) for the storage node are formed at the resultant structure.
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